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E3200 GaN缺陷检测设备

E3200是针对GaN 功率器件和HB GaN LED应用，可以检测GaN衬底及PSS基GaN、Si基GaN 和SiC基GaN 等外延片的表面和荧光缺陷，最小检测颗粒81nm。可以检测并区分颗粒（particle）、凹坑（pit）、凸起（bump）、划伤（scratch）、污点（stain）、裂纹（crack）、PL 黑点、PL scratch、PL crystal 缺陷等表面及荧光缺陷。支持4"、6"、8"晶圆检测，具有高产能、检测准确和检出率高的优点。


适应晶圆尺寸Wafer Size

l Size: 4", 6", 8" compatible; 标配2 cassettes; other sizes upon requests

l Thickness: 350um~1500um（其它厚度需要测试）

缺陷类别及检测能力Defect Inspection Capability

Surface Defects

Materials

Sensitivity

颗粒particle

Si

81nm

GaN on Si, Sapphire, PSS or SiC

0.2um

凹坑 micropit

Epi pits GaN on Si, Sapphire or SiC

0.2~0.3um

Epi pits GaN on PSS

0.5um

凸起bump

Epi bump GaN on Si or SiC

≥1um bump; depth>5nm

Epi bump GaN on Sapphire or PSS

≥1um bump; depth>20nm

划伤scratch

GaN substrate

depth: 10nm；width: 0.4um；length: 10um

GaN Epi

depth: 30nm；width: 0.5um；length: 10um

crescent

GaN on Si

81nm

Hex/Hex pit etc

GaN on Si, SIC，and PSS

Classified by deep learning algorithms

污点stain

GaN substrate and GaN Epi

Diameter≥20um；height>1nm

裂纹 crack

GaN on Si

距表面15um内

PL缺陷检测：GaN crystal void; Hexagon; dark line, dark spot, fog, GaN crystal defect, PL scratch etc.



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